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Document type:
Konferenzbeitrag / Conference Paper
Title:
Elemental analysis on group-III nitrides using heavy ion ERD
Collection editors:
Phillpot, S. R.; Bristowe, P. D.; Stroud, D. G.; Smith, J. R.
Title of conference publication:
Proceedings of the 1997 MRS Fall Meeting
Subtitle of conference publication:
Boston, MA, USA; ; 1-4 December 1997
Series title:
Materials Research Society Symposium - Proceedings
Series volume:
482
Conference title:
Materials Research Society Symposium (1997, Boston, MA)
Venue:
Boston, MA
Year of conference:
1997
Date of conference beginning:
01.12.1997
Date of conference ending:
04.12.1997
Place of publication:
Warrendale, PA, United States
Publisher:
MRS
Year:
1997
Pages from - to:
745-756
Language:
Englisch
Keywords:
Carrier concentration ; Crystal impurities ; Hydrogen ; Ion beams ; Metallorganic chemical vapor deposition ; Molecular beam epitaxy ; Nitriding; Semiconducting aluminum compounds ; Semiconductor doping ; Semiconductor growth ; Substrates ; X ray diffraction analysis ; Elastic recoil detection (ERD) ; Energetic heavy ion beams, Nitrides
Abstract:
Elastic recoil detection (ERD) using energetic heavy ion beams is used to measure depth profiles of light and medium heavy elements in thin films. The main advantages of ERD are the possibilities of obtaining reliable and quantitative results, a sensitivity in the ppm region or a depth resolution even better than 1 nm. ERD analysis is employed to obtain quantitative information about the aluminum content of molar fraction in MBE grown AlxGa1-xN layers on Al2O3 substrates. Nitridation of heated A... »
ISSN:
0272-9172
Article ID:
Code 48274
Department:
Fakultät für Luft- und Raumfahrttechnik
Institute:
LRT 2 - Institut für angewandte Physik und Messtechnik
Chair:
Dollinger, Günther
Open Access yes or no?:
Nein / No
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