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Autor:
Bhuwalka, Krishna K. 
Originaltitel:
Novel Tunneling Devices for Future CMOS Technologies 
Jahr:
2006 
Typ:
Dissertation 
Einrichtung:
Universität der Bundeswehr München, Fakultät für Elektrotechnik und Informationstechnik 
Betreuer:
Eisele, Ignaz, Prof. Dr. rer. nat. 
Gutachter:
Eisele, Ignaz, Prof. Dr. rer. nat.; Schulz, Jörg, Prof. Dr.-Ing. 
Format:
PDF 
Sprache:
Englisch 
Schlagworte:
CMOS-Schaltung ; Feldeffekttransistor ; Tunneleffekt ; Silicium ; Germanium ; Verbindungshalbleiter ; Computersimulation 
Stichworte:
band-to-band tunneling, gate workfunction engineering, high speed, low-power, novel CMOS devices, surface tunnel transistors, scaling SIGE, simulations, sub-100 nm MOSFET, suv-60 mV/dec swing, subthreshold swing, TFET, tunneling transistor, tunnel FET, vertical MOSFET, Zener tunneling 
Kurzfassung:
Scaling limitations of the conventional MOSFETs demand need for novel ideas and devices. A serious problem with scaling conventional MOSFETs is the enhanced junction tunneling leakage currents due to the non-scalability of the junction electric fields. To overcome this problem, devices based on tunneling currents have been proposed where tunneling currents are no longer an unwanted parasitic effect. The tunnel FET, a three terminal gated p-i-n diode is one such device, originally proposed in III...    »
 
Tag der mündlichen Prüfung:
20.12.2005 
Eingestellt am:
17.02.2009 
Ort:
Neubiberg 
Vorname (Autor):
Krishna K. 
Nachname (Autor):
Bhuwalka