Precise nitrogen depth profiling by high-resolution RBS in combination with angle-resolved XPS
Zeitschrift:
Nuclear Instruments and Methods in Physics Research Section B
Jahrgang:
268
Heftnummer:
11-12
Jahr:
2010
Seiten von - bis:
1960-1963
Sprache:
Englisch
Stichwörter:
Analysis of light elements ; Angle-resolved X-ray photoelectron spectroscopy ; Angle-resolved XPS ; Angular dependence ; Combination analysis ; Elastic recoil detection ; High resolution ; High-K gate stacks ; High-resolution RBS ; Light elements ; Nitrogen depth profiles ; Nitrogen depth profiling ; Nitrogen profile ; XPS, Chemical elements ; Nitrogen ; Rutherford backscattering spectroscopy ; Semiconducting silicon ; Spectrum analysis ; X ray photoelectron spectroscopy, Depth profiling «
Analysis of light elements ; Angle-resolved X-ray photoelectron spectroscopy ; Angle-resolved XPS ; Angular dependence ; Combination analysis ; Elastic recoil detection ; High resolution ; High-K gate stacks ; High-resolution RBS ; Light elements ; Nitrogen depth profiles ; Nitrogen depth profiling ; Nitrogen profile ; XPS, Chemical elements ; Nitrogen ; Rutherford backscattering spectroscopy ; Semiconducting silicon ; Spectrum analysis ; X ray photoelectron spectroscopy, Depth... »
Abstract:
Nitrogen depth profiling in a high-k gate stack structure, SiON/HfO2/SiON/Si(0 0 1) was performed by high-resolution Rutherford backscattering spectroscopy (HRBS) in combination with angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The nitrogen depth profile is determined so that both the HRBS spectrum and the angular dependence of the XPS yield are reproduced. The obtained nitrogen profile is compared with the result of high-resolution elastic recoil detection (ERD) which is the most reliable technique for depth profiling of light elements. The agreement between the result of the present combination analysis and that of high-resolution ERD is fairly good, showing that the present combination analysis is a promising method for the analysis of light elements. «
Nitrogen depth profiling in a high-k gate stack structure, SiON/HfO2/SiON/Si(0 0 1) was performed by high-resolution Rutherford backscattering spectroscopy (HRBS) in combination with angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The nitrogen depth profile is determined so that both the HRBS spectrum and the angular dependence of the XPS yield are reproduced. The obtained nitrogen profile is compared with the result of high-resolution elastic recoil detection (ERD) which is the most r... »