Besides silicon carbide, group-III nitrides are also suitable large-band-gap semiconductor materials for high-temperature gas sensor devices. Exposing GaN-based Schottky diodes with catalytically active platinum electrodes to hydrogen, we observed a decrease of the rectifying characteristics which we attribute to a decrease in Schottky barrier height. Current-voltage and elastic recoil detection measurements were used to investigate the H-sensing behavior of such devices. Our results indicate an interfacial effect as the origin of the sensor response to hydrogen.    «

Besides silicon carbide, group-III nitrides are also suitable large-band-gap semiconductor materials for high-temperature gas sensor devices. Exposing GaN-based Schottky diodes with catalytically active platinum electrodes to hydrogen, we observed a decrease of the rectifying characteristics which we attribute to a decrease in Schottky barrier height. Current-voltage and elastic recoil detection measurements were used to investigate the H-sensing behavior of such devices. Our results indicate an...    »