Rauch, C.; Reurings, F.; Tuomisto, F.; Veal, T. D.; McConville, C. F.; Lu, H.; Schaff, W. J.; Gallinat, C. S.; Koblmüller, G.; Speck, J. S.; Egger, Werner; Löwe, Benjamin; Ravelli, Luca; Sojak, Stanislav
Dokumenttyp:
Zeitschriftenartikel / Journal Article
Titel:
In-vacancies in Si-doped InN
Zeitschrift:
Physica Status Solidi (A) Applications and Materials Science
Jahrgang:
207
Heftnummer:
5
Jahr:
2010
Seiten von - bis:
1083-1086
Sprache:
Englisch
Abstract:
The introduction of vacancy type point defects by Si doping in InN grown by plasma-assisted molecular beam epitaxy was studied using a monoenergetic positron beam. With the combination of positron lifetime and Doppler broadening measurements, compensating In-vacancy (V In) acceptors were identified in the material. For increasing Si doping an enhanced formation of VIn defects was observed, up to a concentration of c