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Document type:
Konferenzbeitrag / Conference Paper
Title:
Electrical activity of B and As segregated at the Si-SiO2 interface
Collection editors:
Downey, D. F.; Law, M. E.; Claverie, A.; Rendon, M. J.
Title of conference publication:
Symposium C – Si Front-End Junction Formation Technologies
Parallel title of conference publication:
Silicon Front-End Junction Formation Technologies
Series title:
Materials Research Society Symposium - Proceedings
Series volume:
717
Conference title:
Materials Research Society Symposium (2002, San Francisco, CA)
Venue:
San Francisco, CA
Year of conference:
2002
Date of conference beginning:
02.04.2002
Date of conference ending:
04.04.2002
Publisher:
Materials Research Society
Year:
2002
Pages from - to:
115-120
Language:
Englisch
Keywords:
Annealing ; Arsenic ; Boron ; Ellipsometry ; Interfaces (materials) ; Silica ; Spectroscopic analysis , Screening oxides ; Semiconducting silicon
Abstract:
During spike annealing of ultra-shallow junctions, large fractions of the dopants form a partially active pile-up at the interface between silicon and the screening oxide layer. In this paper, we show results of sheet resistance, SIMS and high resolution Elastic Recoil Detection measurements to investigate the physical and electrical behaviour of B and As dopant atoms at the interface. Our results show that the fraction of dopants segregated at the interface is as high as 30-50
ISSN:
0272-9172
Department:
Fakultät für Luft- und Raumfahrttechnik
Institute:
LRT 2 - Institut für angewandte Physik und Messtechnik
Chair:
Dollinger, Günther
Open Access yes or no?:
Nein / No
Miscellaneous:
correspondence_address1 = Frühauf, J.; Infineon technologies AG, IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium; email: Jens.Fruehauf@irnec.be
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