In this work we propose a fully differential amplifier, designed in 22 nm FDSOI (fully depleted silicon on insulator), with supply voltage of 0.8 V and achieving 8 GHz gain bandwidth (GBW), 80 dB dc gain and phase margin of 49 degrees in unity gain configuration with a load capacitor of 2 pF. The two-stage folded cascode gain boosted transconductance amplifier (OTA) has been designed to have a inter-stage gain of 8 in a high speed analog-to-digital converter (ADC) and is verified by post-layout simulations.
«In this work we propose a fully differential amplifier, designed in 22 nm FDSOI (fully depleted silicon on insulator), with supply voltage of 0.8 V and achieving 8 GHz gain bandwidth (GBW), 80 dB dc gain and phase margin of 49 degrees in unity gain configuration with a load capacitor of 2 pF. The two-stage folded cascode gain boosted transconductance amplifier (OTA) has been designed to have a inter-stage gain of 8 in a high speed analog-to-digital converter (ADC) and is verified by post-layout...
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