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Document type:
Konferenzbeitrag / Conference Paper
Title:
Characterization of AlxGa1-xN films prepared by plasma-induced molecular-beam epitaxy on c-plane sapphire
Collection title:
Materials Research Society Symposium - Proceedings
Collection editors:
Abernathy, C. R.; Amano, H.; Zolper, J. C.
Series title:
Symposium D – Gallium Nitride and Related Materials II
Series volume:
468
Conference title:
Symposium D – Gallium Nitride and Related Materials (2., 1997, San Francisco)
Venue:
San Francisco
Year of conference:
1997
Date of conference beginning:
01.04.1997
Date of conference ending:
04.04.1997
Place of publication:
Pittsburgh, PA, United States
Publisher:
Materials Research Society
Year:
1997
Pages from - to:
305-310
Language:
Englisch
Keywords:
Atomic force microscopy ; Composition ; Molecular beam epitaxy ; Nitrides ; Plasma applications ; Sapphire ; Substrates ; Thin films ; X ray diffraction analysis , Interplanar spacings ; Lattice constants , Semiconducting gallium compounds
Abstract:
AlxGa1-xN films were grown on c-plane sapphire by plasma induced modular beam epitaxy with 0 ≤ x ≤ 1. The composition and purity of the AlxGa1-xN layers was determined by elastic recoil deletion analysis with a relative error of 5
ISSN:
02729172
DOI:
Department:
Fakultät für Luft- und Raumfahrttechnik
Institute:
LRT 2 - Institut für angewandte Physik und Messtechnik
Chair:
Dollinger, Günther
Open Access yes or no?:
Nein / No
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