A comparative study of low-energy heavy ion elastic recoil detection, high-resolution Rutherford backscattering and secondary ion mass spectrometry
Journal:
Nuclear Instruments and Methods in Physics Research Section B
Volume:
249
Issue:
1-2 Special Issue
Year:
2006
Pages from - to:
847-850
Language:
Englisch
Keywords:
Heavy ions ; Microelectronics ; Rutherford backscattering spectroscopy ; Secondary ion mass spectrometry ; Silicon ; Depth resolution ; ERDA ; Light elements ; Thin film analysis ; Thin films
Abstract:
The analysis of thin films in the range of 10 nm and less has become very important in microelectronics. The goal of this article is an evaluation of low-energy TOF-ERDA (time-of-flight elastic recoil detection analysis) in comparison with low-energy SIMS (secondary ion mass spectrometry) and HRBS (high-resolution Rutherford backscattering spectrometry), using a thin SiO2/Si3N4/SiO2 stack as a test vehicle. Comparisons are made on the depth resolution, its loss as a function of depth and the quantification accuracy. «
The analysis of thin films in the range of 10 nm and less has become very important in microelectronics. The goal of this article is an evaluation of low-energy TOF-ERDA (time-of-flight elastic recoil detection analysis) in comparison with low-energy SIMS (secondary ion mass spectrometry) and HRBS (high-resolution Rutherford backscattering spectrometry), using a thin SiO2/Si3N4/SiO2 stack as a test vehicle. Comparisons are made on the depth resolution, its loss as a function of depth and the qua... »