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Document type:
Zeitschriftenartikel / Journal Article
Title:
Doping and its efficiency in a-SiOx:H
Journal:
Physical Review B
Volume:
69
Issue:
11
Year:
2004
Pages from - to:
1152061-11520616
Language:
Englisch
Keywords:
carbon dioxide ; glass ; hydrogen ; oxygen ; silicon derivative, article ; chemical modification ; concentration (parameters) ; hardness ; semiconductor ; vapor
Abstract:
Amorphous hydrogenated silicon suboxides (a-SiOx:H) deposited by plasma enhanced chemical vapor deposition have a band gap which can be tuned from 1.9 to 3.0 eV by varying the oxygen content [O] from 0 to 50 at.
ISSN:
0163-1829
Department:
Fakultät für Luft- und Raumfahrttechnik
Institute:
LRT 2 - Institut für angewandte Physik und Messtechnik
Chair:
Dollinger, Günther
Open Access yes or no?:
Nein / No
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