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Document type:
Zeitschriftenartikel / Journal Article
Title:
Optimization of thin, nitrogen-rich silicon oxynitrides grown by rapid thermal nitridation
Journal:
Journal of the Electrochemical Society
Volume:
152
Issue:
5
Year:
2005
Pages from - to:
G334-G338
Language:
Englisch
Keywords:
Annealing; Deposition ; Field effect transistors ; MOS capacitors ; Nitrides ; Oxidation ; Substrates ; Thin films, Interface properties ; Oxynitrides ; Thermal nitridation ; Thermal processing, Silicon compounds
Abstract:
We have systematically examined nitrogen-rich silicon oxynitrides with a thickness of about 2 nm grown by rapid thermal nitridation in ammonia. In this paper the nitrogen incorporation as well as the electrical properties of the oxynitrides are discussed in detail. With the help of elastic recoil detection measurements it could be shown that the incorporated nitrogen concentration can be controlled precisely in a range between 20 and 60
ISSN:
0013-4651
DOI:
Department:
Fakultät für Luft- und Raumfahrttechnik
Institute:
LRT 2 - Institut für angewandte Physik und Messtechnik
Chair:
Dollinger, Günther
Open Access yes or no?:
Nein / No
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