Oila, J.; Kemppinen, A.; Laakso, A.; Saarinen, K.; Egger, Werner; Liszkay, Laszlo; Sperr, Peter; Lu, H.; Schaff, W. J.
Document type:
Zeitschriftenartikel / Journal Article
Title:
Influence of layer thickness on the formation of in vacancies in InN grown by molecular beam epitaxy
Journal:
Applied Physics Letters
Volume:
84
Issue:
9
Year:
2004
Pages from - to:
1486-1488
Language:
Englisch
Abstract:
We have used a low-energy positron beam to identify In vacancies in InN layers grown on Al2O3 by molecular beam epitaxy. Their concentration decreases from similar to5x10(18) to below 10(16) cm(-3) with increasing layer thickness (120-800 nm). The decrease in the vacancy concentration coincides with the increase in the electron Hall mobility, suggesting that In vacancies act as electron scattering centers.