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Authors:
Hirler, Alexander; Biba, Josef; Alsioufy, Adnan; Lehndorff; Thomas; Sulima, Torsten; Lochner, Helmut; Abelein, Ulrich; Hansch, Walter 
Document type:
Zeitschriftenartikel / Journal Article 
Title:
Evaluation of effective stress times and stress levels from mission profiles for semiconductor reliability 
Collection editors:
Labat, Nathalie; Marc, François; Fremont, Hélène; Bafleur, Marise 
Title of conference publication:
28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis 
Journal:
Microelectronics Reliability 
Issue:
76-77 
Organizer (entity):
Univ Bordeaux, IMS Lab, CNRS, Bordeaux INP, LAAS CNRS Toulouse, ANADEF, European Failure Anal Network, European Ctr Power Elect, Univ Bordeaux, Sci & Technol Dept, Univ Bordeaux, Excellence Initiat, ADERA Congres Org 
Conference title:
European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (28., 2017, Bordeaux) 
Conference title:
ESREF 2017 
Venue:
Bordeaux, FRANCE 
Year of conference:
2017 
Date of conference beginning:
25.09.2017 
Date of conference ending:
28.09.2017 
Publisher:
Elsevier Ltd. 
Year:
2017 
Pages from - to:
38-41 
Language:
Englisch 
Abstract:
Lifetime and duty cycles of automotive electronics are increasing, inducing new challenges to reliability predictions and testing. For qualification purposes, the automotive industry generates various time-dependent mission profiles with various stressors and varying stress levels according to different use cases. We present a theoretical model, describing the common approach, to reduce the stressors from time-dependent mission profiles to the two single parameters "effective stress level" an...    »
 
Department:
Fakultät für Elektrotechnik und Informationstechnik 
Institute:
EIT 2 - Institut für Physik 
Chair:
Hansch, Walter 
Open Access yes or no?:
Ja / Yes