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Document type:
Konferenzbeitrag / Conference Paper
Title:
Ex-situ plasma doping of MoS2 thin films synthesised by thermally assisted conversion process: Simulations and experiment
Title of conference publication:
IEEE 12th Nanotechnology Materials and Devices Conference (NMDC)
Organizer (entity):
IEEE
Conference title:
IEEE Nanotechnology Materials and Devices Conference (12., 2017, Singapur)
Conference title:
IEEE 12th Nanotechnology Materials and Devices Conference (NMDC)
Venue:
Singapur
Year of conference:
2017
Date of conference beginning:
02.10.2017
Date of conference ending:
04.10.2017
Publishing institution:
IEEE
Year:
2018
Pages from - to:
175-176
Language:
Englisch
Abstract:
Controllable doping of two-dimensional (2D) materials is one of the main research challenges associated with the practical realization of 2D semiconductors in hetero-and homo-junctions. We report that the selected-area treatment of MoS2 films with nitrogen plasma can modify the resistivity of the film. To identify the underlying physical mechanism responsible for such observation, we systematically investigated the transport properties of cTLM-patterned contacts on ~70nm non-intentionally doped (NID), p-and p-doped MoS2 films before and after plasma exposure. Electrical characterization demonstrates that p-type doping of MoS2 is achieved by plasma-induced nitrogen doping. HR-TEM images confirm that no etching of the exposed film has occurred. Our experimental observations are supported by first principles atomic scale simulations suggesting the interaction of nitrogen with defects and vacancies in the …
ISBN:
978-1-5386-2772-3
Department:
Fakultät für Elektrotechnik und Informationstechnik
Institute:
EIT 2 - Institut für Physik
Chair:
Düsberg, Georg
Open Access yes or no?:
Nein / No
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