Miniaturized integrated hot electron emitters are highly
sought after for application in chemical analytics and field-applicable
systems. Here, we present the use of ultrathin pyrolyzed polymer films
(PPFs) as the gate electrode, enabling the fabrication of highly efficient
planar hot electron emitters (PHEEs). The thickness of the PPF was
observed to be roughly 1 nm across a full 4” wafer, approaching the
monolayer limit. Conductivities of up to 3.5 × 10
4 S/m at pyrolysis
temperatures of only 900 °C were measured, representing a 2-fold
increase compared to bulk values. This renders an easily accessible 2D
material with high electron transparency. Thus, the PHEE exhibits very
high transfer ratios of up to 31% and proves to be stable at high
pressures over an extended period of time. Furthermore, the straightforward integration route of the PPF presented here comprises
only two steps: photolithography and subsequent pyrolysis. The fabricated devices exhibit high uniformity in performance, with a
transfer ratio standard deviation of 2.9% across a single wafer. Ultimately, the devices were fabricated exclusively with silicon dioxide
on silicon in combination with carbon, which represents a sustainable fabrication approach with inert materials. It has been
demonstrated that the PHEE can also operate in both nitrogen and air, illustrating the utility of these emitters for gas ionization and
sensing.
«
Miniaturized integrated hot electron emitters are highly
sought after for application in chemical analytics and field-applicable
systems. Here, we present the use of ultrathin pyrolyzed polymer films
(PPFs) as the gate electrode, enabling the fabrication of highly efficient
planar hot electron emitters (PHEEs). The thickness of the PPF was
observed to be roughly 1 nm across a full 4” wafer, approaching the
monolayer limit. Conductivities of up to 3.5 × 10
4 S/m at pyrolysis
temperatures of...
»