Two-dimensional (2D) materials such as transition metal dichalcogenides (TMDCs) have gained attention for neuromorphic computing applications due to their resistive switching (RS) behavior [1], [2]. Among TMDCs, platinum diselenide (PtSe₂) stands out because it can be grown at complementary metal-oxide-semiconductor (CMOS) back-end-of-line (BEOL) compatible temperatures [3], [4] and it has shown excellent long-term stability [5]. However, its potential for RS remains largely unexplored with only preliminary proof-of-concept characteristics presented in a multilayer PtSe₂ device with Au electrodes [6]. Here, we present the first detailed study on forming free RS in PtSe₂ -based crosspoint (CP) memristors using CMOS-compatible electrodes. We find remarkably low switching fields (0.08 V /nm) likely related to our choice of electrode materials and excellent retention for at least several days.