Transition Metal Dichalcogenindes (TMD) have considerable potential for applications spanning electronics, sensors and optoelectronics due to the wide ranging electronic and optical properties which are displayed by this class of 2D layered materials [1]. Research is focused on issues such as: large area growth [2, 3], stable approaches to doping [4] and achieving required values of specific contact resistivity [5]. We are contributing to the research effort by investigating the structural, optical and electronic properties of crystalline molybdenum disulfide (MoS₂) grown by chemical vapour deposition (CVD) in a commercial 300mm atomic layer deposition reactor. In this work we report on the properties of monolayer and multilayer MoS₂ growth at 550 o C using Mo (CO) 6 and H₂S precursors on a number of different substrates, including SiO₂, sapphire and amorphous alumina. This work focuses on the topology …