A 0.8-V Fully Differential Amplifier with 80-dB DC Gain and 8-GHz GBW in 22-nm FDSOI CMOS Technology
Titel Konferenzpublikation:
2023 IEEE International Symposium on Circuits and Systems (ISCAS)
Konferenztitel:
IEEE International Symposium on Circuits and Systems (2023, Monterey, Calif.)
Tagungsort:
Monterey, CA, USA
Jahr der Konferenz:
2023
Datum Beginn der Konferenz:
21.05.2023
Datum Ende der Konferenz:
25.05.2023
Verlagsort:
Piscataway, NJ
Verlag:
IEEE
Jahr:
2023
Seiten von - bis:
1-5
Sprache:
Englisch
Abstract:
In this work we propose a fully differential amplifier, designed in 22 nm FDSOI (fully depleted silicon on insulator), with supply voltage of 0.8 V and achieving 8 GHz gain bandwidth (GBW), 80 dB dc gain and phase margin of 49 degrees in unity gain configuration with a load capacitor of 2 pF. The two-stage folded cascode gain boosted transconductance amplifier (OTA) has been designed to have a inter-stage gain of 8 in a high speed analog-to-digital converter (ADC) and is verified by post-layout simulations. «
In this work we propose a fully differential amplifier, designed in 22 nm FDSOI (fully depleted silicon on insulator), with supply voltage of 0.8 V and achieving 8 GHz gain bandwidth (GBW), 80 dB dc gain and phase margin of 49 degrees in unity gain configuration with a load capacitor of 2 pF. The two-stage folded cascode gain boosted transconductance amplifier (OTA) has been designed to have a inter-stage gain of 8 in a high speed analog-to-digital converter (ADC) and is verified by post-layout... »