Login
Dokumenttyp:
Konferenzbeitrag / Conference Paper
Titel:
Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques
Titel Sammlung:
Proceedings of SPIE - The International Society for Optical Engineering
Untertitel Sammlung:
Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes; Salt Lake City, UT; United States; 21 October 2002 through 25 October 2002
Herausgeber Sammlung:
Kolbesen, B. O.; Claeys, C.; Stallhofer, P.; Tardif, F.; Schroder, D. K.; Shaffner, T. J.; Tajima, M.; Rai - Choudhury, P.
Reihentitel:
The International Society for Optical Engineering
Bandnummer Reihe:
5133
Konferenztitel:
Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices (2002, Salt Lake City, UT)
Tagungsort:
Salt Lake City, UT
Jahr der Konferenz:
2002
Datum Beginn der Konferenz:
21.10.2002
Datum Ende der Konferenz:
25.10.2002
Verlegende Institution:
Society of Photo-optical Instrumentation Engineers
Jahr:
2003
Seiten von - bis:
223-232
Sprache:
Englisch
Stichwörter:
Data reduction ; Dielectric materials ; Gates (transistor) ; Metallorganic chemical vapor deposition ; Permittivity ; Silicon compounds ; Atomic layer deposition (ALD) ; Hafnium compounds
Abstract:
The physical properties of HfO2 layers prepared by atomic layer and metal organic chemical vapor deposition (MOCVD) were analyzed. A combination of different complementary analysis techniques was used during the analysis. A similar deposition time dependence was found for the MOCVD layers deposited at 300 and 485° C. It was shown that the density increases with the number of deposition cycles for the atomic layer deposition (ALD) layers.
ISSN:
0277-786X
Article-ID:
Code 61548
Fakultät:
Fakultät für Luft- und Raumfahrttechnik
Institut:
LRT 2 - Institut für angewandte Physik und Messtechnik
Professur:
Dollinger, Günther
BibTeX