Czochralski-grown nitrogen-doped (NCZ) silicon was studied using different methods. Measurements of interface traps density, effective generation lifetime and effective surface generation velocity were performed on selected Metal-Oxide-Semiconductor (MOS) structures. Application of the positron annihilation technique (PAS) - pulsed low energy positron system (PLEPS) - was focused on the detection of nitrogen-related defects in NCZ silicon in the near surface region. PAS - PLEPS technique gave relevant results on p-type NCZ silicon. Low sensitivity in the application to n-type NCZ silicon discriminates the PAS - PLEPS technique and should be alternated by other experimental technique. On the other hand, more pertinent measurement of generation lifetime was performed on MOS structures with n-type Si. Although the generation lifetime decreases in NCZ silicon, considerable lateral homogenization of the relaxation time was observed on the wafer.    «

Czochralski-grown nitrogen-doped (NCZ) silicon was studied using different methods. Measurements of interface traps density, effective generation lifetime and effective surface generation velocity were performed on selected Metal-Oxide-Semiconductor (MOS) structures. Application of the positron annihilation technique (PAS) - pulsed low energy positron system (PLEPS) - was focused on the detection of nitrogen-related defects in NCZ silicon in the near surface region. PAS - PLEPS technique gave re...    »