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Autoren:
Uedono, Akira; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Egger, Werner; Koschine, Tönjes; Hugenschmidt, Christoph; Dickmann, Marcel; Shima, Kohei; Kojima, Kazunobu; Chichibu, Shigefusa F.; Ishibashi, Shoji 
Dokumenttyp:
Zeitschriftenartikel / Journal Article 
Titel:
Annealing Behavior of Vacancy-Type Defects in Mg- and H-Implanted GaN Studied Using Monoenergetic Positron Beams 
Zeitschrift:
Physica Status Solidi (B) Basic Solid State Physics 
Jahrgang:
256 
Heftnummer:
10 
Jahr:
2019 
Seiten von - bis:
1900104 
Sprache:
Englisch 
Stichwörter:
GaN ; ion implantation ; Mg ; defects ; vacancies ; positron annihilation 
Abstract:
Vacancy-type defects in Mg-implanted GaN with and without hydrogen (H) implantation are probed by using monoenergetic positron beams. Mg+ and H+ ions are implanted into GaN(0001¯) to obtain 0.1 and 0.7-µm-deep box profiles with Mg and H concentrations of 1 × 1019 and 2 × 1020 cm−3, respectively. For the as-implanted samples, the major defect species is determined to be Ga-vacancy (VGa) related defects such as VGa, divacancy (VGaVN), and their complexes with impurities. For Mg-implanted samples,...    »
 
Article-ID:
1900104 
Fakultät:
Fakultät für Luft- und Raumfahrttechnik 
Institut:
LRT 2 - Institut für Angewandte Physik und Messtechnik 
Professur:
Dollinger, Günther 
Open Access ja oder nein?:
Nein / No