Jakschik, Stefan; Schroeder, Uwe; Hecht, Thomas; Krueger, Dietmar; Dollinger, Günther; Bergmaier, Andreas; Luhmann, Claudia; Bartha, Johann W.
Dokumenttyp:
Zeitschriftenartikel / Journal Article
Titel:
Physical characterization of thin ALD-Al2O3 films
Zeitschrift:
Applied Surface Science
Jahrgang:
211
Heftnummer:
1-4
Jahr:
2003
Seiten von - bis:
352-359
Sprache:
Englisch
Stichwörter:
Aluminum compounds ; Deposition ; Dielectric materials ; Interfaces (materials) ; Silicon nitride ; X ray photoelectron spectroscopy ; Atomic layer deposition ; Thin films
Abstract:
Aluminum oxide was deposited using atomic layer deposition on either a silicon oxide or a silicon nitride interface. Water vapor or ozone were used as oxidation precursors. The structural properties of these films were investigated by time-of-flight secondary-ion-mass-spectroscopy (ToF-SIMS), X-ray photoelectron spectroscopy (XPS) and elastic recoil detection (ERD). Special attention was given to contamination issues of the film and the interface, bonding conditions and temperature influence on diffusion. The results suggest that the silicon most likely diffused along grain boundaries of polycrystalline Al2O3. Carbon and hydrogen were located at the interface and furthermore hydrogen diffused out of the film to some extent due to anneal. Carbon content in the layer was reduced when using O3 as an oxidant. The formation of metallic aluminum clusters was not observed for any of the investigated process conditions. «
Aluminum oxide was deposited using atomic layer deposition on either a silicon oxide or a silicon nitride interface. Water vapor or ozone were used as oxidation precursors. The structural properties of these films were investigated by time-of-flight secondary-ion-mass-spectroscopy (ToF-SIMS), X-ray photoelectron spectroscopy (XPS) and elastic recoil detection (ERD). Special attention was given to contamination issues of the film and the interface, bonding conditions and temperature influence on... »