In thin film electronic applications, the limiting factor, in terms of cost and usability, is generally the substrate material. As a consequence, different materials are being investigated as potential lightweight, inexpensive and flexible substrates. In this respect, we have been the first research collaboration to produce silicon-based electronics on paper substrates. Here we present structural characterisation of hydrogenated amorphous silicon (a-Si:H) layers deposited on 80 g m-2 wood-free paper, with and without an intermediate metallic interlayer, using low temperature hot wire chemical vapour deposition (HW-CVD). Both pulsed positron beam profiling and X-ray diffraction studies indicate that the growth rate on the uncoated substrate is slightly higher than with prior metallization. There is no evidence of a crystalline phase or voids in the a-Si:H layers. The internal defect structure is similar, with a dominant dangling bond complex of similar size, which has a slightly longer lifetime than in layers grown at higher temperatures on conventional substrates.
«In thin film electronic applications, the limiting factor, in terms of cost and usability, is generally the substrate material. As a consequence, different materials are being investigated as potential lightweight, inexpensive and flexible substrates. In this respect, we have been the first research collaboration to produce silicon-based electronics on paper substrates. Here we present structural characterisation of hydrogenated amorphous silicon (a-Si:H) layers deposited on 80 g m-2 wood-free p...
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