Homoepitaxial diamond films grown by chemical vapour deposition (CVD) in a methane deuterium plasma were investigated for their deuterium and hydrogen content using high resolution elastic recoil detection (ERD) with a depth resolution of about 0.5 nm. The as-grown diamond films showed large surface conductivity as it is used for diamond surface channel field effect transistors. The ERD measurements revealed an amount of (1.7±0.2) ×1015 at/cm2 of deuterium on the (100) diamond surface, which is in agreement with a deuterium terminated (2 × 1) reconstructed (100) diamond surface. The hydrogen and deuterium bulk concentration is only about 1.0 × 1019 at/cm3, even at a depth of 1.5 nm below the surface. Therefore, it can be concluded, that the highly conductive p-type layer in as-deposited CVD diamond films is not due to additionally incorporated hydrogen in the subsurface region in contrary to many conduction models.
«Homoepitaxial diamond films grown by chemical vapour deposition (CVD) in a methane deuterium plasma were investigated for their deuterium and hydrogen content using high resolution elastic recoil detection (ERD) with a depth resolution of about 0.5 nm. The as-grown diamond films showed large surface conductivity as it is used for diamond surface channel field effect transistors. The ERD measurements revealed an amount of (1.7±0.2) ×1015 at/cm2 of deuterium on the (100) diamond surface, which is...
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