The influence of H2S on the CVD diamond growth, the sulfur incorporation and the electronic properties of sulfur containing homoepitaxial diamond films were studied. Laser reflection interferometry (LRI) in combination with mass spectroscopy (MS) showed that H2S modifies the gas phase chemistry by reducing the concentration of CHx species. As a consequence thereof, at high deposition temperatures the growth rate decreased. At lower substrate temperatures, the observed increase in the growth rate after sulfur addition indicates that these gas phase effects are overcompensated by processes at the growing diamond surface. The incorporation coefficient of sulfur into the definitely boron free diamond films was very low (less than 10-6). Incorporation seems to be enhanced by a reduction of the substrate temperature, by the presence of Si and, most effectively, by addition of CO2. For 0.5    «

The influence of H2S on the CVD diamond growth, the sulfur incorporation and the electronic properties of sulfur containing homoepitaxial diamond films were studied. Laser reflection interferometry (LRI) in combination with mass spectroscopy (MS) showed that H2S modifies the gas phase chemistry by reducing the concentration of CHx species. As a consequence thereof, at high deposition temperatures the growth rate decreased. At lower substrate temperatures, the observed increase in the growth rate...    »