Nonpolar Zn 1-x Mg x O epitaxial films were grown by plasma-assisted molecular beam epitaxy on a-plane ZnO substrates. A smooth surface morphology was accomplished under oxygen-rich growth conditions. The benefits of the use of ZnO substrates on the structural properties are reflected by a low-density of threading dislocations. Furthermore, no indications for the generation of basal plane stacking faults are found. The pseudomorphic growth on a-plane ZnO substrates efficiently locks the epitaxial Zn 1-x Mg x O films to the wurtzite structure up to    «

Nonpolar Zn 1-x Mg x O epitaxial films were grown by plasma-assisted molecular beam epitaxy on a-plane ZnO substrates. A smooth surface morphology was accomplished under oxygen-rich growth conditions. The benefits of the use of ZnO substrates on the structural properties are reflected by a low-density of threading dislocations. Furthermore, no indications for the generation of basal plane stacking faults are found. The pseudomorphic growth on a-plane ZnO substrates efficiently locks the epitaxia...    »