Oxidized nanochannel in silicon have been demonstrated to be suitable for positronium (Ps) formation and cooling also at low sample temperature. To investigate the Ps yield and to clarify the Ps formation mechanism we studied, by Positron Annihilation Spectroscopy (PAS), nanochanneled Si p-type samples in the 150-430 K temperature range. Ps yield was found to be constant in the 150-300 K temperature range, then it increases up to ∼50