Hydrogen response mechanism of Pt-GaN Schottky diodes
Zeitschrift:
Applied Physics Letters
Jahrgang:
80
Heftnummer:
7
Jahr:
2002
Seiten von - bis:
1222-1224
Sprache:
Englisch
Stichwörter:
Current voltage ; Elastic recoil detection ; Group III nitrides ; High temperature Gas Sensors ; Interfacial effects ; Platinum electrodes ; Rectifying characteristics ; Response mechanisms ; Schottky barrier heights ; Schottky diodes ; Sensor response, Electrodes ; Gallium nitride ; Hydrogen ; Platinum ; Semiconducting silicon ; Semiconducting silicon compounds ; Semiconductor diodes ; Sensors ; Silicon carbide ; Schottky barrier diodes
Abstract:
Besides silicon carbide, group-III nitrides are also suitable large-band-gap semiconductor materials for high-temperature gas sensor devices. Exposing GaN-based Schottky diodes with catalytically active platinum electrodes to hydrogen, we observed a decrease of the rectifying characteristics which we attribute to a decrease in Schottky barrier height. Current-voltage and elastic recoil detection measurements were used to investigate the H-sensing behavior of such devices. Our results indicate an interfacial effect as the origin of the sensor response to hydrogen. «
Besides silicon carbide, group-III nitrides are also suitable large-band-gap semiconductor materials for high-temperature gas sensor devices. Exposing GaN-based Schottky diodes with catalytically active platinum electrodes to hydrogen, we observed a decrease of the rectifying characteristics which we attribute to a decrease in Schottky barrier height. Current-voltage and elastic recoil detection measurements were used to investigate the H-sensing behavior of such devices. Our results indicate an... »