Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study
Zeitschrift:
Applied Surface Science
Jahrgang:
252
Heftnummer:
9
Jahr:
2006
Seiten von - bis:
3201-3208
Sprache:
Englisch
Abstract:
Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using differen: methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping. «
Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using differen: methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results c... »