Login
Dokumenttyp:
Konferenzbeitrag / Conference Paper
Titel:
Recent developments in nuclear methods in support of semiconductor characterization
Titel Sammlung:
Proceedings of SPIE - The International Society for Optical Engineering
Untertitel Sammlung:
Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes; Salt Lake City, UT; United States; 21 October 2002 through 25 October 2002
Herausgeber Sammlung:
Kolbesen, B. O.; Claeys, C.; Stallhofer, P.; Tardif, F.; Schroder, D. K.; Shaffner, T. J.; Tajima, M.; Rai - Choudhury, P.
Reihentitel:
The International Society for Optical Engineering
Bandnummer Reihe:
5133
Konferenztitel:
Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices (2002, Salt Lake City, UT)
Tagungsort:
Salt Lake City, UT
Jahr der Konferenz:
2002
Datum Beginn der Konferenz:
21.10.2002
Datum Ende der Konferenz:
25.10.2002
Verlegende Institution:
Society of Photo-optical Instrumentation Engineers
Verlag:
SPIE
Jahr:
2003
Seiten von - bis:
50-62
Sprache:
Englisch
Stichwörter:
Dosimetry ; Ion implantation ; Radiation damage ; Rutherford backscattering spectroscopy ; Secondary ion mass spectrometry ; Semiconductor materials ; Sputtering ; Thin films ; Nuclear materials ; Semiconductor device manufacture
Abstract:
The analysis of thin materials related to semiconductors using nuclear techniques was presented. Decreasing the beam energy from the conventional energy of 2 MeV to lower than 0.5 MeV or lower transforms rutherford backscattering (RBS) to a near surface analysis technique. It was concluded that problems of material characterization could be solved using secondary ion mass spectrometry (SIMS) and dedicated nuclear techniques that provide good insight in the material behavior in shallow layers.
ISSN:
0277-786X
Fakultät:
Fakultät für Luft- und Raumfahrttechnik
Institut:
LRT 2 - Institut für angewandte Physik und Messtechnik
Professur:
Dollinger, Günther
Open Access ja oder nein?:
Nein / No
BibTeX