The determination of the composition of thin (1.5-3 nm) high-k layers ZrO2/Al2O3 becomes more and more important in microelectronics. High resolution Rutherford backscattering spectrometry and high resolution elastic recoil detection can achieve depth resolutions down to 1 nm while Rutherford backscattering spectrometry and nuclear reaction analysis are perfectly suited to quantify the zirconium, the oxygen and the aluminum content. The goal of this paper is to investigate the use of nuclear techniques for the characterization of thin high-k materials.    «

The determination of the composition of thin (1.5-3 nm) high-k layers ZrO2/Al2O3 becomes more and more important in microelectronics. High resolution Rutherford backscattering spectrometry and high resolution elastic recoil detection can achieve depth resolutions down to 1 nm while Rutherford backscattering spectrometry and nuclear reaction analysis are perfectly suited to quantify the zirconium, the oxygen and the aluminum content. The goal of this paper is to investigate the use of nuclear tec...    »