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Authors:
Polisski, G.; Dollinger, Günther; Bergmaier, Andreas; Kovalev, D.; Heckler, H.; Koch, Frederick 
Document type:
Zeitschriftenartikel / Journal Article 
Title:
Acceptor depletion in p-type porous silicon 
Journal:
Physica Status Solidi (A) Applications and Materials Science 
Volume:
168 
Issue:
Year:
1998 
Pages from - to:
R1-R2 
Language:
Englisch 
Keywords:
Atoms ; Boron ; Carbon ; Crystals ; Doping (additives) ; Etching ; Fluorine ; Hydrogen ; Oxygen ; Passivation ; Porosity ; Surfaces, Acceptor depletion ; Anodic etching ; Elastic recoil detection ; Volume to surface ratio, Porous silicon 
ISSN:
0031-8965 
Department:
Fakultät für Luft- und Raumfahrttechnik 
Institute:
LRT 2 - Institut für angewandte Physik und Messtechnik 
Chair:
Dollinger, Günther 
Open Access yes or no?:
Nein / No