2D transition metal dichalcogenides (TMDs) exhibit electronic properties from semimetals to wide bandgap semiconductors due to their thickness dependent bandgap. This property opens a wide diversity of applications that can be made from TMDs. For 3D heterogeneous integration of TMDs into the back-end-of-line (BEOL) of Si complementary metal-oxide-semiconductor circuitry, wafer-level direct growth (without film transfer) of TMDs within the BEOL thermal budget limit (550 °C/2 hours or 500 °C/5 hours [1]) is essential. In the literature, the majority of the TMDs (e.g. MoS₂) are achieved from high temperature (650 °C - 1100 °C) deposition/anneal processes that are not compatible with BEOL [2]. In this work, MoS₂ is successfully grown by chemical vapor deposition (CVD) approximately at/below BEOL thermal budget limit. We explore the potential of the achieved MoS₂ films for BEOL logic (i.e …